Efficient Power Conversion (EPC) Introduces 300 V Gallium Nitride Power Transistors for High Frequency Applications

EPC2025 GaN power transistor offers power systems designers a 300 V power transistor capable of 2ns rise times for high frequency DC-DC converters and medical diagnostic instruments.

EL SEGUNDO, Calif.--()--EPC announces the EPC2025, a 300 V power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density. Applications enhanced by higher switching speeds include ultra-high frequency DC-DC converters, medical diagnostic equipment, power inverters, and LED lighting.

The EPC2025 has a voltage rating of 300 V and maximum RDS(on) of 150 mΩ with a 4 A output. It is available in passivated die form with solder bars for efficient heat dissipation and ease of assembly. The EPC2025 measures 1.95 mm x 1.95 mm for increased power density.

“As end-systems increasingly require smaller size DC-DC power converters, especially those used in portable equipment, the demand for corresponding higher speed switching power converters is increasing. The EPC2025 allows power designers to increase the switching frequency of their power conversion systems for increased efficiency and smaller footprint,” said Alex Lidow, EPC’s co-founder and CEO.

Development Board

The EPC9042 development board is a 300 V maximum device voltage, half bridge with onboard gate driver, featuring the EPC2025, onboard gate drive supply and bypass capacitors. This 2” x 1.5” board has been laid out for optimal switching performance and contains all critical components for easy evaluation of the 300 V EPC2025 eGaN FET.

Price and Availability

The EPC2025 eGaN FETs are priced for 1K units at $5.29 each

The EPC9042 development boards are priced at $137.75 each

Both are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Design Information and Support for eGaN FETs:

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

www.epc-co.com

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Contacts

Efficient Power Conversion
Joe Engle, 310.986.0350
joe.engle@epc-co.com

Release Summary

EPC introduces GaN power transistor offering power systems designers a 300 V power transistor capable of 2ns rise times for high frequency DC-DC converters and medical diagnostic instruments.

Contacts

Efficient Power Conversion
Joe Engle, 310.986.0350
joe.engle@epc-co.com