Research and Markets: Global GaN Semiconductor Devices Market 2014-2018 - Defense and Aerospace, Consumer Electronics, ICT, and Automotive

DUBLIN--()--Research and Markets (http://www.researchandmarkets.com/research/xbwnlx/global_gan) has announced the addition of the "Global GaN Semiconductor Devices Market 2014-2018" report to their offering.

The Global GaN Semiconductor Devices Market to grow at a CAGR of 26.9% over the period 2013-2018.

GaN is a wide band gap semiconductor material. Its properties such as saturation velocity and high breakdown voltage make it an apt choice for high power applications in high-voltage switching devices such as radio frequency (RF) power amplifiers. The usage of GaN in semiconductor devices is cost-effective compared to silicon and gallium arsenide. GaN semiconductor devices are smaller, lighter, tougher, and more efficient than silicon semiconductor devices and are hence used to replace silicon in semiconductor devices. These devices find applications across several sectors such as Defense and Aerospace, Consumer Electronics, ICT, and Automotive.

One of the key trends in the market is the preference for the use of Gallium Nitride with different substrates. Silicon and non-silicon substrates and epitaxy layers can now be fused together to manufacture robust semiconductor devices.

According to the report, the key factor driving the market is the increased adoption of GaN substrates by high-power RF semiconductor device manufacturers. The worldwide expansion of the communication and network infrastructure, especially in emerging countries, is driving the demand for RF semiconductors, thereby increasing the demand for GaN semiconductor devices in the global market.

Further, the report states that one of the major challenges in this market is the huge capital investment required for manufacturers to effectively install and operate GaN semiconductor devices.

Key Vendors

  • Cree
  • Freescale Semiconductor
  • Fujitsu
  • GaN Systems
  • International Rectifier
  • Nichia
  • RF Micro Devices

Key Topics Covered:

  1. Executive Summary
  2. List of Abbreviations
  3. Scope of the Report
  4. Market Research Methodology
  5. Introduction
  6. Market Landscape
  7. Market Segmentation by End-user Sectors
  8. Market Segmentation by Product
  9. Geographical Segmentation
  10. Key Leading Countries
  11. Buying Criteria
  12. Market Growth Drivers
  13. Drivers and their Impact
  14. Market Challenges
  15. Impact of Drivers and Challenges
  16. Market Trends
  17. Trends and their Impact
  18. Vendor Landscape
  19. Key Vendor Analysis
  20. Market Summary

For more information visit http://www.researchandmarkets.com/research/xbwnlx/global_gan

Contacts

Research and Markets
Laura Wood, Senior Manager
press@researchandmarkets.com
For E.S.T Office Hours Call 1-917-300-0470
For U.S./CAN Toll Free Call 1-800-526-8630
For GMT Office Hours Call +353-1-416-8900
U.S. Fax: 646-607-1907
Fax (outside U.S.): +353-1-481-1716
Sector: Semiconductor

Contacts

Research and Markets
Laura Wood, Senior Manager
press@researchandmarkets.com
For E.S.T Office Hours Call 1-917-300-0470
For U.S./CAN Toll Free Call 1-800-526-8630
For GMT Office Hours Call +353-1-416-8900
U.S. Fax: 646-607-1907
Fax (outside U.S.): +353-1-481-1716
Sector: Semiconductor