MACOM Extends Industry Leading GaN Portfolio with New 15 W GaN on SiC Pulsed Power Transistor

Unmatched Transistor Delivers 63% Drain Efficiency with 50 V Operation over DC-3.5 GHz

LOWELL, Mass.--()--M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, today announced a new GaN on SiC HEMT Pulsed Power Transistor for civilian and military radar pulsed applications.

The MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized unmatched GaN on Silicon Carbide RF power transistors optimized for a variety of RF power amplifier applications. The devices provide a typical 17 W of peak output power with 15.5 dB of power gain and 63% efficiency. These high performance transistors are assembled using state of the art wafer fabrication processes and provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs.

“The new 15 W peak GaN power transistor offers a versatile and high performance solution for pulsed driver and power applications over a broad frequency range,” said Paul Beasly, Product Manager. “The device is an ideal driver stage for MACOM’s higher power GaN transistors for L-Band and S-Band pulsed radar applications.”

Operating between the DC-3.5 GHz frequency range, the devices are highly robust transistors with high voltage breakdowns and boast a mean time to failure (MTTF) of 600 years. The product is offered in both an enhanced flanged (Cu/W) and flangeless (Cu) ceramic package which provide excellent thermal performance.

The table below outlines typical performance for the 1.2-1.4 GHz frequency band.

Parameters             Units            

MAGX-000035-015000/S

Frequency             GHz             DC-3.5

Pout

            W             17.7
Power Gain             dB             15.5
Drain Efficiency             %             63
Droop             dB             0.1
Load Mismatch Stability             VSWR-S             5:1
Load Mismatch Tolerance             VSWR-T             10:1

Samples of MAGX-000035-015000 and MAGX-000035-01500S are available from stock. Final datasheets and additional product information can be obtained from the MACOM website at: www.macom.com.

Come visit us and ask us about our GaN portfolio at Booth #131 at European Microwave Week (EuMW) 2014, October 7-9, 2014.

ABOUT MACOM:

M/A-COM Technology Solutions Holdings, Inc. (www.macom.com) is a leading supplier of high performance analog RF, microwave, and millimeter wave products that enable next-generation Internet and modern battlefield applications. Recognized for its broad catalog portfolio of technologies and products, MACOM serves diverse markets, including high speed optical, satellite, radar, wired & wireless networks, CATV, automotive, industrial, medical, and mobile devices. A pillar of the semiconductor industry, we thrive on more than 60 years of solving our customers' most complex problems, serving as a true partner for applications ranging from RF to Light.

Headquartered in Lowell, Massachusetts, M/A-COM Tech is certified to the ISO9001 international quality standard and ISO14001 environmental management standard. M/A-COM Tech has design centers and sales offices throughout North America, Europe, Asia and Australia.

MACOM, M/A-COM, M/A-COM Technology Solutions, M/A-COM Tech, Partners in RF & Microwave, The First Name in Microwave and related logos are trademarks of MACOM. All other trademarks are the property of their respective owners.

For more information about MACOM, please visit www.macom.com follow @MACOMtweets on Twitter; join MACOM on LinkedIn, or visit the MACOM YouTube Channel.

FOR SALES INFORMATION, PLEASE CONTACT:

North Americas -- Phone: 800.366.2266

Europe -- Phone: +353.21.244.6400

India -- Phone: +91.80.43537383

China – Phone: +86.21.2407.1588

Contacts

MEDIA CONTACTS:
M/A-COM Technology Solutions Inc.
Husrav Billimoria, 978-656-2896
Husrav.Billimoria@macom.com
or
Rainier Communications
Jessie Glockner, 508-475-0025 x140
jglockner@rainierco.com
or
embedded PR
Gerlinde Knoepfle, +49 (0)89 64913634-12
gk@embedded-pr.de

The devices provide a typical 17 W of peak output power with 15.5 dB of power gain and 63% efficiency. This high performance transistor is assembled using state of the art wafer fabrication processes and provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. (Photo: Business Wire)

???news_view.multimedia.download???

???pagination.previous??? ???pagination.next???

Release Summary

The MAGX-000035-015000 and MAGX-000035-01500S are gold-metalized unmatched GaN on Silicon Carbide RF power transistors optimized for a variety of RF power amplifier applications.

Sharing

Contacts

MEDIA CONTACTS:
M/A-COM Technology Solutions Inc.
Husrav Billimoria, 978-656-2896
Husrav.Billimoria@macom.com
or
Rainier Communications
Jessie Glockner, 508-475-0025 x140
jglockner@rainierco.com
or
embedded PR
Gerlinde Knoepfle, +49 (0)89 64913634-12
gk@embedded-pr.de