MILPITAS, Calif.--(BUSINESS WIRE)--SanDisk Corporation (NASDAQ: SNDK), a global leader in flash storage solutions, today announced the availability of its 1Z-nanometer (nm) technology, the most advanced NAND flash process node in the world. The 15nm technology will ramp on both two bits-per-cell (X2) and three bits-per-cell (X3) NAND flash memory architectures with production ramp to begin in the second half of 2014.
“We are thrilled to continue our technology leadership with the industry’s most advanced flash memory process node, enabling us to deliver the world’s smallest and most cost effective 128 gigabit chips,” said Dr. Siva Sivaram, senior vice president, memory technology, SanDisk. “We are delighted that these new chips will allow us to further differentiate and expand our portfolio of NAND flash solutions.”
The 15nm technology uses many advanced process innovations and cell-design solutions to scale the chips along both axes. SanDisk's All-Bit-Line (ABL) architecture, which contains proprietary programming algorithms and multi-level data storage management schemes, has been implemented in the 1Z technology to deliver NAND flash solutions with no sacrifice in memory performance or reliability. SanDisk’s 1Z technology will be utilized across its broad range of solutions, from removable cards to enterprise SSDs.
SanDisk Corporation (NASDAQ: SNDK), a Fortune 500 and S&P 500 company, is a global leader in flash storage solutions. For more than 25 years, SanDisk has expanded the possibilities of storage, providing trusted and innovative products that have transformed the electronics industry. Today, SanDisk’s quality, state-of-the-art solutions are at the heart of many of the world's largest data centers, and embedded in advanced smart phones, tablets and PCs. SanDisk’s consumer products are available at hundreds of thousands of retail stores worldwide. For more information, visit www.sandisk.com.
© 2014 SanDisk Corporation. All rights reserved. SanDisk and the SanDisk logo are trademarks of SanDisk Corporation, registered in the United States and other countries. Other brand names mentioned herein are for identification purposes only and may be the trademarks of their respective holder(s).
This news release contains certain forward-looking statements, including expectations for technology and product introductions, wafer production, technology and product capabilities, costs and performance and markets that are based on our current expectations and involve numerous risks and uncertainties that may cause these forward-looking statements to be inaccurate. Risks that may cause these forward-looking statements to be inaccurate include among others: our 1Z nanometer process technology, our X2 and X3 NAND memory architectures or our solutions utilizing these new technologies may not be available when we expect or in the capacities that we expect or perform as expected, or the other risks detailed from time-to-time in our Securities and Exchange Commission filings and reports, including, but not limited to, our most recent annual report on Form 10-K. We do not intend to update the information contained in this press release.