TOKYO--(BUSINESS WIRE)--Toshiba Corporation (TOKYO: 6502) today announced the launch of a new series of high-speed switching type super junction MOSFETs. The new “DTMOS IV-H series” is based on Toshiba’s fourth generation 600V super junction MOSFET “DTMOS IV series”. Mass production of the three products in the new series will start from the end of March.
While keeping the low ON-resistance level of conventional “DTMOS IV” products, the new series achieves faster switching performance by reducing the parasitic capacitance between gate and drain by 45%. This can also contribute to improved power efficiency in products. Additional package options are scheduled for the future.
Key Features of the New Product
1. Gate pattern optimization, resulting in a 45 percent reduction in gate-drain charge compared to the “DTMOS IV series”.
2. Reduction of the increase of ON-resistance at high temperatures due to the use of the single epitaxial process.
3. Low ON-resistance lineup
1. High efficiency switching power supplies for servers and telecom base stations
2. Power conditioners for photovoltaic inverters
Main Specifications of the New Product
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Power Device Sales & Marketing Department
Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
Toshiba is a world-leading diversified manufacturer, solutions provider and marketer of advanced electronic and electrical products and systems. Toshiba Group brings innovation and imagination to a wide range of businesses: digital products, including LCD TVs, notebook PCs, retail solutions and MFPs; electronic devices, including semiconductors, storage products and materials; industrial and social infrastructure systems, including power generation systems, smart community solutions, medical systems and escalators & elevators; and home appliances.
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