EL SEGUNDO, Calif.--(BUSINESS WIRE)--Efficient Power Conversion Corporation, (www.epc-co.com) the leader in enhancement mode gallium nitride FET technology, announces today that its EPC8000 family of high frequency eGaN FETs has been recognized with inclusion in the EDN list of 100 Hot Products for 2013.
“We are very excited that EDN, an industry-leading magazine, has recognized our innovative new family of eGaN FETs. These devices take EPC and gallium nitride transistor technology to a level of performance that enables applications that were previously beyond the capability of silicon MOSFETs. The EPC8000 eGaN FETs blur the line between power and RF transistor technology,” said Alex Lidow, EPC’s co-founder and CEO.
These third generation devices have cut new ground for power transistors with switching transition speeds in the sub nano-second range. They are capable of hard switching applications even beyond the 10MHz for which they were designed. These products exhibit very good small signal RF performance with high gain well into the low GHz range, making them a competitive choice for RF applications.
Examples of applications benefiting from the low power, compact, high frequency EPC8000 family of devices include hard-switching power converters operating in the multi-megahertz range, envelope tracking in RF power amplifiers using EPC8005, highly resonant wireless power transfer systems for wireless charging of mobile devices.
EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, solar micro inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.