Rambus Invited to Demonstrate and Present Innovations for Future Main Memory at ISSCC 2013

SUNNYVALE, Calif.--(BUSINESS WIRE)--Rambus Inc.(NASDAQ: RMBS):

Who:	Rambus Inc.
Where:	International Solid-State Circuit Conference
	Marriott Marquis Hotel
	San Francisco, CA
When:	February 20, 2013 at 8:30 a.m.

Rambus engineers will demonstrate and present innovations for future main memory systems at the 2013 International Solid-State Circuit Conference (ISSCC), the premier forum for showcasing advances in solid-state circuits.

The presentation will highlight a single-ended, low-signal swing transceiver that couples high-speed (up to 6.4Gb/s) read/write capabilities with industry leading power efficiency. This technology can satisfy the demand for high-density, low power and high-speed memory interfaces in cloud computing environments.

Demonstration Session Details:

Title: A 6.4Gb/s Near-Ground Single-Ended Transceiver for Dual-Rank DIMM Memory Interface Systems
8:30 a.m. – 9:00 a.m.

For additional details, visit: www.rambus.com.