GLOBALFOUNDRIES Details Advanced Technology Aimed at 22nm and Beyond

At VLSI 2009, engineers describe new technique to continue scaling in HKMG transistors

SUNNYVALE, Calif. & KYOTO, Japan--(BUSINESS WIRE)--GLOBALFOUNDRIES today described an innovative technology that could overcome one of the key hurdles to advancing high-k metal gate (HKMG) transistors, bringing the industry one step closer to the next generation of mobile devices with more computing power and vastly improved battery life.

“HKMG is a critical component of GLOBALFOUNDRIES’ technology roadmap”

The semiconductor industry is celebrated for overcoming seemingly insurmountable odds to continue the trend toward smaller, faster, and more energy-efficient products. Performed in partnership with IBM through GLOBALFOUNDRIES’ participation in the IBM Technology Alliance, the new research is designed to enable the continued scaling of semiconductor components to the 22 nanometer node and beyond.

At the 2009 Symposium on VLSI Technology in Kyoto, Japan, GLOBALFOUNDRIES reported the first demonstration of a technique that allows the equivalent oxide thickness (EOT) in a high-k metal gate (HKMG) transistor to scale down to well beyond the level required for the 22nm node, while maintaining a combination of low leakage, low threshold voltages, and superior carrier mobility.

“HKMG is a critical component of GLOBALFOUNDRIES’ technology roadmap,” said Gregg Bartlett, senior vice president of technology and research and development. “This development could eventually provide customers with another tool to enhance the performance of their products, particularly in the fast-growing market for ultra-portable notebooks and smartphones with extended battery life. In conjunction with IBM and the alliance partners, we are tapping our global knowledge base to develop advanced technologies that will allow our customers to stay at the leading edge of semiconductor manufacturing.”

To maintain the switching precision of a HKMG transistor, the EOT of the high-k oxide layer must be reduced. However, reducing the EOT increases the leakage current, which can contribute to an increase in the power consumption of a microchip. GLOBALFOUNDRIES and IBM have developed a new technique that overcomes this barrier, demonstrating for the first time that EOT scaling to well beyond the 22nm node can be achieved while maintaining the necessary combination of leakage, threshold voltages, and carrier mobility. The results were successfully demonstrated through fabrication of an n-MOSFET device with EOT of 0.55nm and a p-MOSFET with EOT of 0.7nm.

ABOUT GLOBALFOUNDRIES

GLOBALFOUNDRIES is the world’s first truly global leading-edge semiconductor manufacturing company. Launched in March 2009 through a partnership between AMD (NYSE: AMD) and the Advanced Technology Investment Company (ATIC), GLOBALFOUNDRIES provides a unique combination of leading-edge technology, manufacturing excellence and global operations. GLOBALFOUNDRIES is headquartered in Silicon Valley with facilities in Austin, Dresden and New York.

For more information on GLOBALFOUNDRIES, visit www.globalfoundries.com.

CAUTIONARY STATEMENT

This press release contains forward-looking statements, which are made pursuant to the safe harbor provisions of the U.S. Private Securities Litigation Reform Act of 1995 and include, without limitation, statements regarding the company's current expectations, assumptions, assessments, anticipations, objectives, plans, hopes, beliefs, intentions or strategies regarding the future. These forward-looking statements therefore are subject to risks and uncertainties which could cause actual results to differ materially. Some factors which contribute to these risks and uncertainties include the economic conditions both in the United States and around the world; the difficulties in developing new customers; the demand and supply outlook in the overall semiconductor/foundry industry; the sourcing strategy of potential customer base; competitor actions; the success of company technology alliances; construction progress on additional manufacturing facilities as well as associated governmental processes; the availability of components and equipment; labor and employment issues at manufacturing facilities; the progression of advances in technology and processes; and unforeseen events. The company has no duty to update any forward-looking statements in this release based on new information or events.