December 16, 2008 10:34 PM Eastern Daylight Time
BUSINESS WIRE

Samenvatting: Toshiba, IBM en AMD ontwikkelen 's werelds kleinste FinFET SRAM cel met high-k/metal gate

A bird's-eye view of 0.128 square micrometers FinFET SRAM cells (post silicide formation)(Photo: Business Wire)
A bird's-eye view of 0.128 square micrometers FinFET SRAM cells (post silicide formation)(Photo: Business Wire)
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