December 16, 2008 01:17 PM Eastern Daylight Time
BUSINESS WIRE

Riassunto: Toshiba, IBM e AMD sviluppano la cella SRAM con architettura FinFET e tecnologia high-k/metal gate più piccola al mondo

A bird's-eye view of 0.128 square micrometers FinFET SRAM cells (post silicide formation)(Photo: Business Wire)
A bird's-eye view of 0.128 square micrometers FinFET SRAM cells (post silicide formation)(Photo: Business Wire)
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